STEP COVERAGE OF RF-DIODE-SPUTTERED SIO₂ FILMSSERIKAWA T.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 2; PP. 582-586; BIBL. 15 REF.Article

PERMALLOY FILM PREPARATION BY RF SPUTTERING.SERIKAWA T.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 3-4; PP. 209-216; BIBL. 7 REF.Article

CHAMP COERCITIF ET RESISTIVITE DES COUCHES MINCES DE PERMALLOY PREPAREES PAR PULVERISATION HAUTE FREQUENCESERIKAWA T.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 5; PP. 397-401; ABS. ANGL.; BIBL. 13 REF.Article

ELECTRICAL DAMAGE IN MOS DEVICES BY RF DIODE SPUTTERED ALUMINIUM METALLIZATIONSERIKAWA T; YACHI T.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 882-885; BIBL. 14 REF.Article

EFFECT OF N₂-AR MIXING ON THE REACTIVE SPUTTERING CHARACTERISTICS OF SILICONSERIKAWA T; OKAMOTO A.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 101; NO 1; PP. 1-6; BIBL. 10 REF.Article

THE SIZE EFFECT OF LIFTOFF METALLIZATION OF SPUTTERED ALUMINIUM FILMSSERIKAWA T; SAKURAI T.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 834-837; BIBL. 10 REF.Article

EFFECT OF HYDROGEN-ARGON MIXING FOR SPUTTERED ALUMINUM METALLIZATION ON MOS DEVICES = EFFET D'UN MELANGE D'HYDROGENE A L'ARGON DANS LA METALLISATION DE COMPOSANTS MOS AVEC DE L'ALUMINIUM DEPOSE PAR PULVERISATION CATHODIQUESERIKAWA T; YACHI T.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1187-1189; BIBL. 13 REF.Article

LIFT-OFF PATTERNING OF SPUTTERED SIO₂ FILMSSERIKAWA T; YACHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 918-919; BIBL. 7 REF.Article

LIFT-OFF METALLIZATION OF SPUTTERED. AL ALLOY FILMSSAKURAI T; SERIKAWA T.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1257-1260; BIBL. 9 REF.Article

DISTRIBUTION OF CLOSTRIDIUM BOTULINUM TYPE C IN ISHIKAWA. PREFECTURE, AND APPLICABILITY OF AGGLUTINATION TO IDENTIFICATION OF NONTOXIGENIC ISOLATES OF C. BOTULINUM TYPE C.SERIKAWA T; NAKAMURA S; NISHIDA S et al.1977; MICROBIOL. AND IMMUNOL.; JAP.; DA. 1977; VOL. 21; NO 3; PP. 127-136; BIBL. 21 REF.Article

A SURVEY OF DOGS FROM GIFU AND SHIGA AREA FOR BRUCELLA CANIS.SERIKAWA T; MURAGUCHI T; NAKAO N et al.1977; JAP. J. VETER. SCI.; JAP.; DA. 1977; VOL. 39; NO 6; PP. 635-642; BIBL. 33 REF.Article

Magnetron-sputtered silicon films for gate electrodes in MOS devicesOKAMOTO, A; SERIKAWA, T.Journal of the Electrochemical Society. 1987, Vol 134, Num 6, pp 1479-1484, issn 0013-4651Article

Rapid isothermal annealing of sputtered phosphorus-doped silicon filmsSERIKAWA, T; OKAMOTO, A.Journal of the Electrochemical Society. 1986, Vol 133, Num 2, pp 447-450, issn 0013-4651Article

Reactive sputtering characteristics of silicon in an Ar-N₂ mixtureOKAMOTO, A; SERIKAWA, T.Thin solid films. 1986, Vol 137, Num 1, pp 143-151, issn 0040-6090Article

Lift-off patterning of sputtered SiO₂ films (LOPAS) and its application to recessed field isolationYACHI, T; SERIKAWA, T.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2775-2778, issn 0013-4651Article

Properties of magnetron-sputtered silicon nitride filmsSERIKAWA, T; OKAMOTO, A.Journal of the Electrochemical Society. 1984, Vol 131, Num 12, pp 2928-2933, issn 0013-4651Article

MICROWAVE PRESS-SETTING EQUIPMENT FOR PENCIL MANUFACTURE. = INSTALLATION D'UNE PRESSE A COMMANDE PAR HYPERFREQUENCES POUR LA FABRICATION DE CRAYONSOSHIMA K; TOISHI T; MURANAKA T et al.1975; J. MICROWAVE POWER; CANADA; DA. 1975; VOL. 10; NO 1; PP. 19-26Article

Epileptic seizures in rats homozygous for two mutations, zitter and tremorSERIKAWA, T; YAMADA, J.The journal of heredity. 1986, Vol 77, Num 6, pp 441-444, issn 0022-1503Article

Sputter depositions of silicon film by a planar magnetron cathode equipped with three targetsSERIKAWA, T; OKAMOTO, A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 4, pp 1784-1787, issn 0734-2101Article

Electrical analysis of high-mobility poly-Si TFT's made from laser-irradiated sputtered Si filmsSHIRAI, S; SERIKAWA, T.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 2, pp 450-452, issn 0018-9383Article

In situ phosphorus-doped silicon film depositions by magnetron sputtering in pshophorus vaporOKAMOTO, A; SERIKAWA, T.Japanese journal of applied physics. 1985, Vol 24, Num 4, pp L247-L249, issn 0021-4922Article

Dependences of magnetron-sputtered SiO₂ film properties on argon pressureYACHI, T; SERIKAWA, T.Journal of the Electrochemical Society. 1984, Vol 131, Num 11, pp 2720-2722, issn 0013-4651Article

SIGNIFICANCE OF URINE-CULTURE FOR DETECTING INFECTION WITH BRUCELLA CANIS IN DOGSSERIKAWA T; MURAGUCHI T; NAKAO N et al.1978; JAP. J. VETER. SCI; JPN; DA. 1978; VOL. 40; NO 3; PP. 353-355; BIBL. 7 REF.Article

EFFECT OF A LACTOBACILLUS PRODUCT ADMINISTRATION ON THE ANAEROBIC INTESTINAL FLORA OF AGED ADULTSYAMAGISHI T; SERIKAWA T; MORITA R et al.1974; JAP. J. MICROBIOL.; JAP.; DA. 1974; VOL. 18; NO 3; PP. 211-216; BIBL. 14REF.Article

P₂O₅-SiO₂ film deposition by reactive sputtering in phosphorus vaporSERIKAWA, T; OKAMOTO, A.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 4, pp 1788-1790, issn 0734-2101Article